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BD402N SEMH11 BZX84C27 MR2001 LP490B SR150 DS5CC18 10112
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  Datasheet File OCR Text:
 SMD Type
Silicon NPN Epitaxial 2SC4253
Transistors IC
Features
Good linearity of fT.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 100 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Collector-base time constant Transition frequency Symbol ICBO IEBO Testconditons VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 25 20 70 200 0.2 1.5 1.1 1.6 25 250 600 V V pF ps MHz Min Typ Max 0.1 0.1 Unit iA iA V
V(BR)CEO IC = 1 mA, IB = 0 hFE VCE = 10 V, IC = 10 mA
VCE(sat) IC = 15 mA, IB = 1.5mA VBE(sat) IC = 15 mA, IB = 1.5mA Cob Cc.rbb' fT VCB = 10 V, IE = 0, f = 1MHz VCB = 10 V, IC = 1mA, f = 30MHz VCE = 10 V, IC = 10 mA
Marking
Marking HH
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